NTMS4840N
TYPICAL PERFORMANCE CURVES
12
10
8
10V
4.5 V
4.2 V
4V
3.8 V
T J = 25 ° C
3.4 V
32
28
24
20
V DS ≥ 10 V
6
16
4
2
0
0
1.0
2.0
3.0
4.0
3.2 V
3.0 V
2.8 V
2.6 V
5.0
12
8
4
0
1.5
2
T J = 125 ° C
T J = 25 ° C
2.5 3
T J = ? 55 ° C
3.5
4
4.5
0.060
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
0.030
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.055
0.050
0.045
0.040
0.035
T J = 25 ° C
I D = 6.9 A
0.028
0.026
0.024
0.022
T J = 25 ° C
V GS = 4.5 V
0.030
0.020
0.025
0.020
0.018
0.016
V GS = 10 V
0.015
3
4
5
6
7
8
9
10
0.014
2
3.5
5
6.5
8
9.5
11
12.5
14
1.65
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
100000
I D, DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
1.55
1.45
1.35
1.25
1.15
I D = 7.5 A
V GS = 10 V
10000
V GS = 0 V
T J = 150 ° C
1.05
0.95
0.85
0.75
1000
T J = 125 ° C
0.65
? 50
? 25
0
25
50
75
100
125
150
100
5
10
15
20
25
30
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Voltage
相关PDF资料
NTMS4872NR2G MOSFET N-CH 30V 6A 8-SOIC
NTMS4873NFR2G MOSFET N-CH SGL 30V 8-SOIC
NTMS4916NR2G MOSFET N-CH 30V 11.4A SO8 FL
NTMS4917NR2G MOSFET N-CH 30V 10.2A SO8 FL
NTMS4920NR2G MOSFET N-CH 30V 10.6A 8SOIC
NTMS4935NR2G MOSFET N-CH 30V 10A 8SOIC
NTMS4937NR2G MOSFET N-CH 30V 8.6A 8SOIC
NTMS4N01R2G MOSFET N-CH 20V 3.3A 8-SOIC
相关代理商/技术参数
NTMS4872N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 10.2 A, N−Channel, SO−8
NTMS4872NR2G 功能描述:MOSFET NFET SO8 30V 10.2A 13.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4873NF 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 11.5 A, N−Channel, SO−8
NTMS4873NFR2G 功能描述:MOSFET NFET SO8 30V 11.7A 12MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4916N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 11.6 A, N?Channel, SO?8 Low RDS(on) to Minimize Conduction Losses
NTMS4916NR2G 功能描述:MOSFET NFET SO8 30V 11.4A 9MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4917N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 10.5 A, N?Channel, SO?8 Low RDS(on) to Minimize Conduction Losses
NTMS4917NR2G 功能描述:MOSFET NFET SO8 30V 10.2A 11MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube